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Job Description
We are currently accepting applications for the position of a Research Fellow to join our team and contribute to our research in advanced back-end-of-line (BEOL) transistor and memory development. As a Research Fellow, you will optimize high-mobility oxide-based semiconductor materials for BEOL applications, design integration processes for semiconductor-ferroelectric materials, and perform electrical characterization. This position offers an exciting opportunity to work with a team of researchers and engineers on cutting-edge technologies.
Responsibilities:
1. Develop high-performance metal-oxide-semiconductor and ferroelectric materials.
2. Design integration processes for these materials in BEOL advanced technologies.
3. Conduct fundamental research on the integration of metal-oxide-semiconductor and ferroelectric materials.
4. Design and fabricate BEOL electronics elements for advanced electronic-photonic devices.
5. Perform electrical and optical characterization of devices using professional measurement techniques.
6. Utilize device physics to analyze devices in-depth.
7. Collaborate with team members and external partners to address research challenges and propose innovative solutions.
Qualifications
Candidate should meet at least 4 criteria from the following list:
• PhD Degree in Electrical and Computer Engineering or a related field.
• Extensive experience and expertise in working with oxide semiconductors and ferroelectric materials.
• Proficient in advanced electrical characterization techniques and semiconductor device physics.
• Demonstrated hands-on experience with process integration in cleanroom environments.
• Exceptional analytical skills, with a proven ability to solve complex problems.
• Excellent written and verbal communication skills to effectively communicate research findings.
• Strong team player, capable of collaborating effectively within a research-oriented environment.
